A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node

摘要

We introduce for the first time a novel integration scheme of CBRAM cells, where the Cu electrode is patterned using a subtractive dry-etching process. We demonstrate excellent performances of 30nm-size cells (1μs-write at ≤50μA, >10 endurance, excellent retention at 150°C) as well as scaling potential of CBRAM down to 10nm-node using 5nm-thick Cu electrodes.