A single-element CMOS-based electronic de-embedding technique with TRL level of accuracy

摘要

A single-element de-embedding algorithm with accuracy comparable to TRL is proposed. By performing impedance modulation using CMOS transistors, reflection measurements with ideal shorts are generated from the measured two-port S-parameters. Such measurements with known termination are further utilized for finding the solutions to the test fixtures. As a single structure is sufficient for the extraction of the device S-parameter, saving not only the silicon area but also improving the accuracy due to reduced number of probing. Experimental results up to 65 GHz have validated the proposed single-element approach.