In this study, we explore the impact of active areas on electrical characteristics of practical TiO based memristors. Initially, it is experimentally demonstrated that high resistive state is independent of active areas, while low resistive state is in proportion to the dimensions of active cells. We then argue that these observations could stem from the filamentary formation and rupture within the TiO active cores. Finally, we investigate the dependence of I-V characteristics on active cell size and present measured results that are in good agreement with theoretical analysis.
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