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A 3T or 4T pixel compatible DR extension technique suitable for 3D-IC imagers: A 800×512 and 5μm pixel pitch 2D demonstrator

机译:适用于3D-IC成像器的3T或4T像素兼容DR扩展技术:一个800×512和5μm像素间距的2D演示器

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In this paper is presented a High Dynamic Range (HDR) extension technique that applies to an imager without modifying any of its other specifications (as speed, noise floor or pixel scheme). The technique relies on the division of the focal plane into blocks that are able to choose the integration time from a set of eleven exposures, reaching +60db extension compared to a standard CMOS imager. The exposure time of each block can also be controlled by an external frame buffer, paving the way to advanced bracketing techniques. This system has been explored with a proof of concept sensor fabricated in a 0.18μm CMOS process.
机译:本文介绍了一种高动态范围(HDR)扩展技术,该技术可应用于成像仪,而无需修改其任何其他规格(如速度,本底噪声或像素方案)。该技术依赖于将焦平面划分为多个块,这些块能够从一组11次曝光中选择积分时间,与标准CMOS成像器相比,扩展时间达到+ 60db。每个块的曝光时间也可以由外部帧缓冲器控制,从而为高级包围技术铺平了道路。该系统已通过采用0.18μmCMOS工艺制造的概念验证传感器进行了探索。

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