Characterization of 1.2kV Silicon Carbide (SiC) semiconductors in hard switching mode for three-phase Current Source Inverter (CSI) prototyping in

摘要

The market brings SiC MOSFET and Schottky diode in the 1.2kV range [1], [2]; this technology can improve AC-400V grid connected solar systems. In the scientific literature, SiC switches have been evaluated for a voltage source inverter operation [3], but there is a lack of studies that address the implementation of SiC components running in a current source inverter. A test bench is built at the Dept. of Solar Technologies (DTS) of the CEA. It allows to characterize SiC power semiconductors TO-220/247 packaged at fixed current and variable voltage. Paper highlights the SiC Schottky diode capacitive charge which influences the transistor switching energies and the commutation last. Two different diodes sizes are evaluated to be implemented in a CSI and the selected diode depends on the switching frequency target.