Advantages of High Power Fast Thyristors and Diodes Produced by Means of Low Temperature Sintering of Silver Paste

摘要

The new possibilities to improve dynamic characteristics of power thyristors and diodes are discussed on the basis of low temperature silicon chip connection and Mo-disc by means of sintering of silver paste. It is described that for fast thyristors with silicon chip diameter 56-100 mm sintering technology allows decreasing greatly turn-off time simultaneously with decrease of on-state voltage. Complex application of sinter technology and proton irradiation allows also producing single chip freewheeling diodes with exclusive soft reverse recovery characteristic.