Enhancing dynamic range and accuracy of load-pull measurements by using prematched transistors

摘要

This paper describes how dynamic range and accuracy of an on-wafer load pull measurement system can be improved without costly investment in equipment. Applying prematching to the transistors on the wafer reduces ohmic losses, leads to a better figure of merit ΔG, and thus increases the accuracy of the whole system. The approach is verified for X-band GaN power transistors.