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IC design challenges and opportunities for advanced process technology

机译:先进工艺技术的IC设计挑战与机遇

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摘要

Moore's Law has entered a new frontier as the incessant progress of device scaling continues to excel in 10nm and beyond. As the physical dimension of devices and interconnect are being shrunk, the design rules and the design flow, for both ASIC and custom designs, face unprecedented complexity. Hence, common IC design practice can no longer separate the design and the process fabrication indifferently. Conventional design optimization techniques also need to take the novel process technologies, such as multi-gate devices (e.g., FinFET), spacer technology, and self-aligned multiple patterning lithography, into account in order to achieve the best possible performance, power, and area for a design. In this talk, the challenges and implication of these new process technologies to IC designers will be touched upon from the foundry's perspective to show how and what to innovate in EDA tools for bridging the gap between physical design and foundry fabrication, and then finally improve the overall design quality and productivity.
机译:摩尔定律已进入新的领域,因为器件定标的不断进步在10nm及以后的工艺中仍表现出色。随着设备和互连的物理尺寸缩小,ASIC和定制设计的设计规则和设计流程面临着前所未有的复杂性。因此,常见的IC设计实践不再能够将设计和工艺制造无差别地分开。常规设计优化技术还需要考虑新颖的工艺技术,例如多栅极器件(例如FinFET),间隔物技术和自对准多图案化光刻技术,以实现最佳的性能,功率和功耗。设计区域。在本次演讲中,将从晶圆代工厂的角度来探讨这些新工艺技术对IC设计人员的挑战和启示,以展示如何和以何种方式进行EDA工具创新,以弥合物理设计与晶圆制造之间的差距,然后最终改善总体设计质量和生产率。

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