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Characterization of a silicon strip detector for photon-counting spectral CT using monoenergetic photons from 40 keV to 120 keV

机译:使用40 keV至120 keV的单能光子对用于光子计数光谱CT的硅条检测器进行表征

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Background: We are developing a segmented silicon strip detector that operates in photon-counting mode and allows pulse-height discrimination with 8 adjustable energy bins. In this work, we determine the energy resolution of the detector using monoenergetic x-ray radiation from 40 keV to 120 keV. We further investigate the effects of pulse pileup and charge sharing between detector channels that may lead to a decreased energy resolution. Methods: For each incident monochromatic x-ray energy, we obtain count spectra at different photon fluxes. These spectra corresponds to the pulse-height response of the detector and allow the determination of energy resolution and charge-sharing probability. The energy resolution, however, is influenced by signal pileup and charge sharing. Both effects are quantified using Monte Carlo simulations of the detector that aim to reproduce the conditions during the measurements. Results: The absolute energy resolution is found to increase from 1.7 to 2.1 keV for increasing energies 40 keV to 120 keV at the lowest measured photon flux. The effect of charge sharing is found to increase the absolute energy resolution by a factor of 1.025 at maximum. This increase is considered as negligibly small. The pileup of pulses leads to a deterioration rate of the energy resolution of 4 • 10~(-3) keV Mcps~(-1) mm~2, corresponding to an increase of 0.04keV per 10 Mcps increase of the detected count rate.
机译:背景:我们正在开发一种分段式硅条探测器,该探测器以光子计数模式工作,并通过8个可调节能量箱来区分脉冲高度。在这项工作中,我们使用40 keV至120 keV的单能X射线辐射确定探测器的能量分辨率。我们进一步研究了脉冲堆积和检测器通道之间电荷共享的影响,这可能导致能量分辨率降低。方法:对于每个入射的单色X射线能量,我们获得在不同光子通量下的计数光谱。这些光谱对应于检测器的脉冲高度响应,并允许确定能量分辨率和电荷共享概率。但是,能量分辨率受信号堆积和电荷共享的影响。使用检测器的蒙特卡洛模拟来量化这两种效应,其目的是在测量过程中重现条件。结果:在最低的测量光子通量下,将能量从40 keV增加到120 keV,发现绝对能量分辨率从1.7 keV增加到2.1 keV。发现电荷共享的效果最大程度地将绝对能量分辨率提高了1.025倍。这种增加被认为是微不足道的。脉冲的堆积导致能量分辨率的下降率达到4•10〜(-3)keV Mcps〜(-1)mm〜2,对应于每增加10 Mcps的检测计数率增加0.04keV。

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