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Optimization design of shielding ring for restraining surface charge accumulation

机译:用于抑制表面电荷累积的屏蔽环优化设计

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The surface of insulators in the GIL is prone to generate charges under a DC high-voltage for a long time, which has a great impact on insulation performance of the insulators. The accumulation of the surface charges is mainly related to surface normal field on insulators. Decreasing surface normal field on insulators can reduce the rate and amount of accumulation of the surface charges. By the way of setting a shielding ring on the center high-voltage electrode, the electric field distribution can be effectively improved, and the surface normal field will be smaller. In order to study the impact of shielding ring on electric field distribution, a simulation model containing GIL hermetic cavity, center electrode, shielding ring, cone-insulator, and so on, is built to yield the electric field data with the software Maxwell 2D. Finite element method is used for analysis. The simulation results show the change of surface normal field with different sizes of the shielding ring and different locations where the shielding ring is. The simulation results suggest that there is an optimal location for the shielding ring to lead to a minimum surface normal field distribution. Also, the results will give some help for the electrode design.
机译:GIL中的绝缘体表面容易发生长时间在DC高压下产生电荷,这对绝缘体的绝缘性能产生了很大的影响。表面电荷的积累主要与绝缘体上的表面普通场有关。在绝缘体上减小表面普通场可以降低表面电荷的累积速率和量。通过在中心高压电极上设定屏蔽环,可以有效地改善电场分布,表面普通场将较小。为了研究屏蔽环对电场分布的影响,建立了含有Gil气密腔,中心电极,屏蔽环,锥形绝缘体等的仿真模型,以产生具有软件麦克斯韦尔2D的电场数据。有限元方法用于分析。仿真结果表明,具有不同尺寸的屏蔽环和屏蔽环的不同位置的表面普通场的变化。仿真结果表明,屏蔽环有最佳位置,以导致最小的表面普通场分布。此外,结果将为电极设计提供一些帮助。

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