Inx Ga1−x As materials for post CMOS application: Materials and device aspects

摘要

High mobility InGaAs material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, InGaAs material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the InGaAs MOSCAP, the combination of wet chemical treatment and in-situ trimethyl aluminum (TMA) pretreatment was found to be the most effective method for InGaAs surface cleaning to achieve a fully inverted InGaAs MOSCAP for post CMOS digital applications. In addition, a high-k composite oxide composed of LaO and HfO is investigated for InGaAs metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of LaO(0.8 nm)/ HfO(0.8 nm) on InGaAs with post deposition annealing at 500 °C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D) of 7.0 × 10 cmeV, small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.