Design of a 440GHz Sub-harmonic GaAs Schottky diode mixer

摘要

This paper present the design and optimization of a 440GHz sub-harmonic mixer based on an anti-parallel pair of planar GaAs Schottky diodes which is flip-chipped onto the 100 um thick quartz substrate. Simulation of the sub-harmonic mixer exhibits that the double side band (DSB) conversion loss is below 8.3 dB over the range of 420-460GHz. The optimized conversion loss of the 440GHz mixer is 7.6 dB at 441GHz under the LO level of 5 mW at room temperature.