首页> 外文会议>IEEE International Conference on Electron Devices and Solid-State Circuits >A 10Gb/s source-synchronous transmitter in 65nm CMOS technology
【24h】

A 10Gb/s source-synchronous transmitter in 65nm CMOS technology

机译:采用65nm CMOS技术的10Gb / s源同步发射机

获取原文

摘要

This paper describes the design of a source-synchronous transmitter in 65nm CMOS technology. The transmitter consists of five data lanes plus one forwarded clock lane. Every single lane works at 10Gb/s. The clock distribution path is carefully designed to ensure the synchronous of the divided clock in every data lane. And this design is power efficient by optimizing the structure of MUX. Furthermore, a 3 tap feed forward equalizer (FFE) is applied to the driver to compensate channel loss. The experiment result shows that, the output peak-to-peak jitter is 50ps when the transmitter delivers 10Gb/s PRBS7 data over a channel which has a loss of 12.3dB at 5GHz. The power consumption of this circuit is 6.1mW/Gbps for 1.2V supply and the chip area is 1.2mm.
机译:本文介绍了65nm CMOS技术中源同步变送器的设计。发射机由五个数据通道和一个转发的时钟通道组成。每个车道都在10GB / s。时钟分布路径经过精心设计,以确保每个数据通道中的划分时钟的同步。通过优化Mux结构,这种设计是有效的。此外,将3个抽头馈送前转均衡器(FFE)应用于驱动器以补偿信道损耗。实验结果表明,当发射机在5GHz损失12.3dB的通道上传递10Gb / s PRBS7数据时,输出峰峰值抖动是50ps。该电路的功耗为6.1MW / Gbps,1.2V电源,芯片面积为1.2mm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号