A Ring Oscillator Using Bootstrap Inverter

摘要

This paper presents a ring oscillator which operates with low voltage and low power consumption using bootstrapped inverters. The proposed circuit was designed using 65nm Silicon on Thin Buried Oxide (SOTB) process. The circuit area was reduced by using a MOS capacitor instead of the capacitor used in the conventional bootstrapped inverter. As a result of post layout, it has an oscillation frequency range of 860~968MHz with a supply voltage of 0.5V, power consumption is 23.4μW at 920MHz, phase noise is -89.3dBc/Hz at a 1MHz offset, and Figure of Merit (FoM) is achieved -164.9.