Design and Simulation of High Performance Dopingless Tunnel Diode

摘要

In this work, a structure of dopingless tunnel diode is proposed. The proposed structure does not require conventional techniques for realizing highly doped p and n regions, as these regions are created by metal work-function engineering. By adjusting anode cathode gap (L_G,AC) and anode cathode metal work-function, the performance of the proposed device showed significant improvement in comparison to conventional Tunnel diode. Further, it has been observed that due to unintentional doping the performance of the proposed dopingless device does not change, therefore, making the device free from such type of process variation effects. Besides this, fabrication of the proposed device does not require high temperature processing and therefore significantly, reduces the thermal budget.