Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

摘要

The carrier scattering mechanisms are quantitatively examined for UTB Ge-OI pMOSFETs. It is confirmed that the μ_fluctuation is dominant for Ge-OI pMOSFETs thinner than ~5 nm and the μ_ph/μ_sr are dominant for thicker channels of >~8 nm.