机译:对In
CMOS integrated circuits; III-V semiconductors; VLSI; elemental semiconductors; gallium arsenide; silicon; surface treatment; III-V fin TLM structure; Insub0.53/subGasub0.47/subAs; Si; VLSI; fin sidewall surfaces; size 35 nm; surface treatment; ultra low contact resistivity; wafer scale III-V; Implants; Metals; Resistance; Rough surfaces; Silicon; Surface roughness; Surface treatment;
机译:与InP封端和未封端的n + sup> -In
机译:<![CDATA [CDATA [晶体结构,新BI(III)卤化物复合物的晶体结构,振动和光学性质:[C
机译:Ge / In
机译:在200 mm GeSnOI衬底上实现了小于10 nm鳍宽的GeSn p-FinFET:最低SS为63 mV /十倍,最高G
机译:通过对嵌入在Si-Al