Characterization of 2-stage RF power amplifier for FMCW radar application

摘要

This paper deals with the characterization of 2-stage RF power amplifier numerically and experimentally. The RF power amplifier is designed to work around frequency of 3GHz for frequency-modulated continuous-wave (FMCW) radar application. In the design process, the Agilent Design System (ADS®) software is utilized to determine the value of amplifier parameters such as gain and voltage standing wave ratio (VSWR). The 2-stage power amplifier is realized by use of AT-64020 transistors type, while the impedance matching circuit is implemented using microstrip lines. The Duroid/RT6006 dielectric substrate with the dielectric constant of 6.15 and the thickness of 1.27mm is applied for the implementation. The characterization result shows that VSWRin and VSWRout of realized amplifier are 1.61 and 2.24, respectively, while the gain is 7.13dB which is 3.56dB lower than of the design result.