Love waves; bulk acoustic wave devices; photoresists; surface acoustic wave delay lines; Love wave delay line devices; SU-8 photoresist coated Love wave devices; SU-8 thickness effects; SiOsub2/sub; frequency 150 MHz; guiding layer; insertion loss; near-zero temperature frequency coefficient; quartz substrate; surface skimming bulk wave device; temperature 0 degC to 120 degC; temperature characteristics; Delay lines; Insertion loss; Resists; Sensors; Substrates; Temperature; Temperature measurement; ST-90°X quartz; SU-8; Temperature characteristics;
机译:温度对爱波在St-90°X石英上沿着Sio 2 sub> / Su-8多导层的传播特性的影响
机译:SU-8导波装置的导引层
机译:胺功能化SU-8层引导Love模式表面声波
机译:SiO2 / SU-8多导层Love波器件的温度稳定性
机译:使用掩埋的光刻胶掩模方法制造多层,独立式,SU-8结构
机译:温度对St-90°X石英上Sio2 / Su-8多导层爱波传播特性的影响
机译:温度对st-90°X石英上sio< sub> 2< / sub> / su-8多导层层的Love波传播特性的影响