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Effect of process parameters on structure and piezoelectric properties of AlN and AlXSc1−XN films deposited by pulsed magnetron sputtering

机译：工艺参数对脉冲磁控溅射沉积AlN和Al X Sc 1-X N薄膜的结构和压电性能的影响

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The paper will report on the deposition and characterization of piezoelectric AlN and AlScN films. Potential applications of the films are in ultrasonic microscopy, energy harvesting and SAW/ BAW filters. Special focus will be on the characterization of the influences of sputter parameters on the structure and the piezoelectric properties of AlScN.

机译：该论文将报道压电AlN和AlScN膜的沉积和表征。薄膜的潜在应用是在超声显微镜，能量收集和声表面波/声表面波滤波器中。特别要注意的是表征溅射参数对AlScN的结构和压电性能的影响。

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《IEEE International Ultrasonics Symposium》|2014年|769-772|共4页
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作者
Barth Stephan; Bartzsch Hagen; Gloss Daniel; Frach Peter; Zywitzki Olaf; Herzog Thomas; Walter Susan; Heuer Henning;
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关键词
Acoustics; Films; III-V semiconductor materials; Magnetomechanical effects; Sputtering; Stress; Substrates; AlN; AlScN; Sputter Deposition; Stress Control; piezoelectric;

机译：声学;薄膜; III-V半导体材料;磁机械效应;溅射;应力;应力;基板; AlN; AlScN;溅射沉积;应力控制;压电;

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Effect of process parameters on structure and piezoelectric properties of AlN and AlXSc1−XN films deposited by pulsed magnetron sputtering

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