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Selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes

机译：用于发光和激光二极管的III型氮化物核壳纳米壁的选择性区域生长

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We demonstrate selective-area growth of patterned III-nitride core-shell nanowalls with nonpolar InGaN quantum well shells over large areas. Transmission electron microscopy and photoluminescence are utilized to examine the growth morphology and emission characteristics.

机译：我们展示了非极性InGaN量子阱壳在大面积上的图案化III型氮化物核-壳纳米壁的选择性区域生长。利用透射电子显微镜和光致发光来检查生长形态和发射特性。

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《Conference on Lasers and Electro-Optics》|2014年|1-2|共2页
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Rishinaramangalam Ashwin K.; Fairchild Michael N.; Masabih Saadat M.Ul; Shima Darryl M.; Balakrishnan Ganesh; Feezell Daniel F.;
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Diode lasers; Gallium nitride; Light emitting diodes; Lithography; Nanoscale devices; Photoluminescence; Substrates;

机译：二极管激光器;氮化镓;发光二极管;光刻;纳米尺度器件;光致发光;基板;
入库时间 2022-08-26 14:59:08

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专利

1. Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography [J] . Xiong Zhuo, Wei Tongbo, Zhang Yonghui, Nanotechnology . 2017,第11期

机译：通过多曝光胶合光刻图案化的GaN / Sapphire模板上的周期纳米滤光二极管阵列的选择性区生长
2. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer [J] . Aditya Prabaswara, Jung-Wook Min, Chao Zhao, Nanoscale Research Letters . 2018,第1期

机译：使用薄Ti夹层在非晶态石英上直接生长基于III族氮化物纳米线的黄色发光二极管
3. Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode [J] . Yik-Khoon Ee, Biser J.M., Cao W., Selected Topics in Quantum Electronics, IEEE Journal of . 2009,第4期

机译：纳米生长的AGGO蓝宝石衬底上III族氮化物发光二极管的金属有机气相外延生长
4. Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate [C] . Ee, Yik-Khoon, Li, Xiao-Hang, Biser, J. M., CLEO;Conference on Lasers and Electro-Optics;Quantum Electronics and Laser Science Conference;QELS . 2010

机译：在图案化的AGOG衬底上以缩写生长模式生长的III型氮化物发光二极管的生长演化和时间分辨光致发光研究
5. Growth, Fabrication, and Characterization of High Performance Long Wavelength c-plane III-Nitride Light-Emitting Diodes [D] . Alhassan, Abdullah Ibrahim. 2018

机译：高性能长波长C面III-氮化物发光二极管的生长，制造和表征
6. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer [O] . Aditya Prabaswara, Jung-Wook Min, Chao Zhao, 2018

机译：使用薄Ti夹层在非晶态石英上直接生长基于III族氮化物纳米线的黄色发光二极管
7. Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer [O] . Aditya Prabaswara, Jung-Wook Min, Chao Zhao, 2018

机译：使用薄Ti层间在非晶石英中直接生长III-氮化物纳米线黄色发光二极管

Selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes

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