Effect of pulse width on dynamic characteristics of high voltage IGBTs

摘要

High Voltage Insulated Gate Bipolar Transistors (HVIGBTs) are used in applications such as traction, medium voltage drives, and power distribution that have high reliability requirements requiring intimate knowledge of HVIGBT performance and limitations at different operation conditions. Transient processes inside the semiconductor device after turn-on require time to reach a stable state. If this stable state is not yet reached before the ensuing turn-off event, the IGBT and Freewheeling diode (FWDi) conduction time influences the switching behavior. This effect is analyzed in this paper. The experimental investigation is done on HVIGBT modules with different blocking voltage ratings. Results are reported normalized to the stable state condition.