Design and evaluation of GaN-based dual-phase interleaved MHz critical mode PFC converter

摘要

This paper presents the design consideration and performance evaluation of gallium nitride (GaN) high electron mobility transistor (HEMT) based dual-phase interleaved MHz critical conduction mode (CRM) power factor correction (PFC) converter. A 1.2kW 1–3MHz interleaved boost PFC converter prototype is built with 97.9% peak efficiency and 120W/in power density. The significant impact of MHz frequency is demonstrated as dramatically size reduction of boost inductor and electro-magnetic interference (EMI) filter. Several inductor designs are discussed. The corner frequency of EMI filter is pushed to several hundreds of kHz. Finally, the limitation of conventional boost PFC converter is discussed as high conduction loss on diode rectifier bridge and high switching loss caused by valley switching, which is negligible in other low frequency PFC converter but significant in MHz PFC converter. The totem-pole bridgeless PFC converter is introduced to further improve the efficiency with no rectifier bridge and zero-voltage switching (ZVS) extension strategy.