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A 52 tuning range QVCO with a reduced noise coupling scheme and a minimum FOMT of 196dBc/Hz

机译:具有降低的噪声耦合方案和最小FOM T 为196dBc / Hz的52%调谐范围QVCO

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A wide-tuning range QVCO with a novel complimentary-coupling scheme is presented. Two NMOS-only VCOs are coupled via complimentary PMOS injection transistors. This shifts the injection current away from the zero-crossings of the output voltage, thereby reducing the sensitivity of the VCO to injection noise, which results in significant phase-noise improvement. Phase-shift is achieved without frequency-dependent phase-shifting networks, allowing robust coupling over a wide tuning range. As a proof-of-concept, a prototype is designed in TSMC 65nm process with 4-bits of discrete tuning spanning the frequency range 4.6–7.8 GHz (52% tuning range). The prototype operates from 0.5V supply, with a power consumption ranging from 7.4mW–11mW, while achieving a minimum figure-of-merit (FOM) of 181.6dBc/Hz, and a minimum figure-of-merit with tuning-range (FOM) of 196dBc/Hz.
机译:提出了具有新型互补耦合方案的宽调谐范围QVCO。两个仅NMOS的VCO通过互补的PMOS注入晶体管耦合。这会将注入电流从输出电压的零交叉点移开,从而降低了VCO对注入噪声的敏感度,从而显着改善了相位噪声。无需依赖于频率的相移网络就可以实现相移,从而可以在很宽的调谐范围内实现稳健的耦合。作为概念验证,在TSMC 65nm工艺中设计了一个原型,其4位离散调谐范围为4.6-7.8 GHz(调谐范围为52%)。该原型采用0.5V电源供电,功耗在7.4mW–11mW范围内,同时实现了181.6dBc / Hz的最小品质因数(FOM)和调谐范围的最小品质因数( FOM)为196dBc / Hz。

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