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Evolution of Cr4+, Cr3+ and Cr2+ contents in Cr:Mg2SiO4 crystals during those oxidizing annealing

机译:Cr4 +,Cr3 +和Cr2 +含量在Cr:Mg2SiO4晶体中的进化氧化退火中的晶体

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The evolution of Cr4+, Cr3+ and Cr2+ contents in Cr:Mg2SiO4 crystals during those prolonged high-temperature oxidizing annealing have been studied. The concentration of Cr4+ increases by factor of 1, 5-2, 5, whereas the parasitic Cr2+ ions practically disappear during such annealing. Therefore this post-growth treatment of Cr:Mg2SiO4 crystals considerably enhances their spectroscopic properties as the active laser media.
机译:研究了Cr4 +,Cr3 +和Cr2 +含量在Cr:Mg2SiO4晶体中的延长在延长的高温氧化退火中的演变。 Cr4 +的浓度增加了1,5-2,5的因子,而寄生CR2 +离子在这种退火期间几乎消失。因此,Cr:Mg2SiO4晶体的这种后生长处理显着增强了它们的光谱性质作为活性激光介质。

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