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A fully integrated triple-band CMOS hybrid-EER transmitter for WCDMA/LTE applications

机译:适用于WCDMA / LTE应用的完全集成三频CMOS混合EER发射机

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This paper presents a fully integrated triple-band CMOS hybrid-EER transmitter for WCDMA/LTE applications. The operation frequency bands are 0.8/2.3 GHz for LTE and 1.9 GHz for WCDMA applications with multi-band class-E power amplifier (PA) using a power cell resizing technique and a multitap transformer. The multi-mode envelope amplifier support 3.84-MHz WCDMA and 5-MHz LTE signal with a dual-switching stage for high efficiency. The PA and envelope amplifier are integrated in a single chip using CMOS process with input/output matching networks. To compensate the nonlinearity of the supply modulated transmitter, the on-chip linearizer is design on a chip. The transmitter achieves output powers of 23/26/22 dBm and power-added efficiency of 27/33/23 % at each frequency band. The transmitter is implemented in a 0.18 µm CMOS process. The total chip size is 1.6 × 2.5 mm2.
机译:本文提出了一种用于WCDMA / LTE应用的完全集成的三频CMOS混合EER发送器。 LTE的工作频段为0.8 / 2.3 GHz,WCDMA应用的工作频段为1.9 GHz,具有使用功率单元调整大小技术和多抽头变压器的多频段E类功率放大器(PA)。多模包络放大器具有双开关级,可支持3.84 MHz WCDMA和5 MHz LTE信号,从而实现高效率。 PA和包络放大器通过CMOS工艺与输入/输出匹配网络集成在单个芯片中。为了补偿电源调制发射机的非线性,在芯片上设计了片上线性化器。该发射机在每个频带上实现23/26/22 dBm的输出功率和27/33/23%的功率附加效率。发送器采用0.18 µm CMOS工艺实现。芯片总尺寸为1.6×2.5 mm 2

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