Numerical model of parallel nano-FET on Coulomb blockade in M_(55)'magic' crystals

摘要

A model of "parallel" metal-graphene quantum FET nanotransistor with a gate on the Coulomb blockade in the "magic" Ir_(55) nanocrystals is proposed and designed. This nanotransistor will have a speed of about 2.5 * 10~(11) Hz and size of 32×32×12 nm~3. It is shown that in this model of nanotransistor a source-drain potential is equal to 1.2 V, the threshold for the opening of the gate U_G is equal to 0.4 V and the total current in parallel connected 250 elementary single-electron nanotransistors - crystals of Ir_(55) is 1.5 * 10~(-5) A. This current is approximately equal to the current in experimental terahertz semiconductor nanotransistors. It is shown that gain coefficient for charge is K_q = 1, and the power gain is equal to K_p ～ 3. Such nanotransistor at using inductive-capacitive load could be an element of the integrated circuit - the generator of electro-magnetic waves with a wavelength of 1.2 mm and power density ～ 10~4 W/cm~2.