Laser pulse crystallization and optical properties of Si/SiO_2 and Si/Si_3N_4 multilayer nano-heterostructures

摘要

Furnace annealing, cw- and pulse laser treatments were applied for crystallization of amorphous Si nano-layers and Si nanoclusters in SiN_x-Si_3N_4 and Si-SiO_2 multilayer nanostructures. The as-deposited and annealed structures were studied using optical methods and electron microscopy techniques. The influence of hydrogen on crystallization and formation of Si nanoclusters was studied. Regimes for pulse laser crystallization of amorphous Si nanoclusters and nanolayers were found. This approach is applicable for the creation of dielectric films with semiconductor nanoclusters and silicon nanostructured films on non-refractory substrates for all-silicon tandem solar cells.