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A low power and high conversion gain 60-GHz CMOS up-conversion mixer using current injection and dual negative resistance compensation techniques

机译:采用电流注入和双重负电阻补偿技术的低功耗,高转换增益60GHz CMOS上变频混频器

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A 60 GHz double-balanced mixer for direct upconversion using standard 90 nm CMOS technology is reported. The up-conversion mixer comprises an enhanced double-balanced Gilbert cell with current injection for power consumption reduction, and negative resistance compensation for conversion gain (CG) enhancement, a Marchand balun for converting the single LO input signal to differential signal, and another Marchand balun for converting the differential RF output signal to single signal. The mixer consumes 8.83 mW and achieves IF-port input return loss of −12.3 dB at 0.1 GHz, LO-port input return loss of −15.4 ∼ −26.7 dB and RF-port input return loss of −12.1 ∼ −28.5 dB for frequencies 57∼64 GHz. At IF of 0.1 GHz, the mixer achieves CG of 2 dB and LO-RF isolation of 48.8 dB at RF of 60 GHz. The corresponding 3-dB bandwidth of RF is 4.4 GHz (57.7∼62.1 GHz). To the authors' knowledge, the LO-RF isolation and power consumption are one of the best results ever reported for a 60 GHz CMOS/BiCMOS up-conversion mixer. In addition, the measured output 1-dB compression point and input third-order inter-modulation point are −10.1 dBm and −2.15 dBm, respectively, at RF of 60 GHz.
机译:据报道,使用标准的90 nm CMOS技术进行直接上变频的60 GHz双平衡混频器。上变频混频器包括一个增强的双平衡吉尔伯特单元,该单元具有降低电流消耗的电流注入,用于增强转换增益(CG)的负电阻补偿,用于将单个LO输入信号转换为差分信号的Marchand平衡-不平衡变换器,以及另一个Marchand平衡-不平衡转换器,用于将差分RF输出信号转换为单信号。混频器的功耗为8​​.83 mW,在0.1 GHz频率下的IF端口输入回波损耗为−12.3 dB,对于频率,LO端口输入回波损耗为−15.4〜-26.7 dB,RF端口输入回波损耗为−12.1〜-28.5 dB 57〜64 GHz。在0.1 GHz的IF频率下,混频器在60 GHz的RF频率下可实现2 dB的CG和48.8 dB的LO-RF隔离。 RF的相应3 dB带宽为4.4 GHz(57.7〜62.1 GHz)。据作者所知,对于60 GHz CMOS / BiCMOS上变频混频器,LO-RF隔离和功耗是有史以来最好的结果之一。此外,在60 GHz的RF下,测得的输出1 dB压缩点和输入三阶互调点分别为-10.1 dBm和-2.15 dBm。

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