A fully integrated UHF passive tag IC having one-time programmable memory in standard CMOS technology

摘要

We present a 2-Kb one-time programmable (OTP) memory for high security RFID applications. The OTP memory cell is based on a two-transistor (2-T) gate-oxide anti-fuse (AF) for low voltage operation. Improved low power circuit design techniques are used including auto shut-off for program mode and self-timed control for read mode. The designed OTP is successfully embedded into a UHF passive RFID tag IC that conforms to the EPCglobal Gen-2 standard. The tag chip was fabricated in a 0.18 μm 1-poly 6-metal standard CMOS process with no additional masks.