Random surface texturing of mc-Silicon for solar cells with picosecond lasers; a comparison between 1064 nm, 532 nm and 355 nm laser emission wavelengths

摘要

Multicrystalline Silicon was textured with picosecond laser. Different laser wavelengths (λ = 1064, 532, 355 nm) where compared regarding laser-induced damage. We found that λ = 355 nm picosecond radiation resulted in shallower defect-reach region.