Cadmium germanium arsenide, CdGeAs{sub}2, is one of the most promising nonlinear crystals available for mid and long-wave infrared frequency conversion. It has one of the highest known nonlinear coefficients (236 pm/V) and has thermal conductivity (0.042 W/cmK) sufficient for use in high average power applications. Difference frequency mixing and optical parametric generation have been demonstrated with CdGeAs{sub}2, as well as efficient second and third harmonic generation of CO{sub}2 lasers. However, crystal absorption losses and the lack of high peak power laser sources in the mid-IR have limited she use of CdGeAs{sub}2 as an OPO crystal. Advances in crystal growth and boule inspection have allowed the production of high quality, low loss single crystals and we report, for the first time, an OPO based on CdGeAs{sub}2.
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