Platinum growth analysis in atomic layer deposition using in-situ resistance measurement

摘要

In this study, the Pt thin films were deposited on the quartz substrate at 300°C by ALD using MeCpPtMe3 and oxygen as precursors. The in-situ resistance of Pt film during ALD reaction was measured by four-point probe resistance measurement. When the ALD cycle number exceeded 80, the resistance dropped rapidly from 107 ohm to nearly 400 ohm, indicating that the resistance gets smaller by a factor of 1 × 105 within 20 cycles of ALD. The morphology of Pt observed by SEM show that the Pt islands with a diameter of 20-30 nm were grown after 80 cycles of ALD. As cycle number increased to 120, the isolated Pt islands were then clustered to form a continuous film.