Platinum Growth Analysis in Atomic Layer Deposition using In-situ Resistance Measurement

摘要

In this study, the Pt thin films were deposited on the quartz substrate at 300°C by ALD using MeCpPtMe_3 and oxygen as precursors. The in-situ resistance of Pt film during ALD reaction was measured by four-point probe resistance measurement. When the ALD cycle number exceeded 80, the resistance dropped rapidly from 10~7 ohm to nearly 400 ohm, indicating that the resistance gets smaller by a factor of 1 × 10~5 within 20 cycles of ALD. The morphology of Pt observed by SEM show that the Pt islands with a diameter of 20-30 nm were grown after 80 cycles of ALD. As cycle number increased to 120, the isolated Pt islands were then clustered to form a continuous film.