Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO2 Interface Defects

摘要

We report electrically detected magnetic resonance (EDMR) results in $mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}_{2}$ metal-oxidesemiconductor field effect transistors before and after high field gate stressing. The measurements utilize EDMR detected through $mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}_{2}$ interface recombination currents. These interface recombination measurements provide information about one aspect of the stressing damage: the chemical and physical identity of trapping centers generated at and very near the $mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}_{2}$ interface. EDMR signal demonstrates that $mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}_{2}$ interface defects known as $mathrm{P}_{mathrm{b}}$ centers play important roles in the stress-induced damage.