Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification

摘要

The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating the significant improvement in subthreshold swing (~double slope) and peak g_m (118% enhancement) due to the internal voltage amplification. The peak g_m enhancement at small V_DS (-0.1V) indicates the intrinsic benefit by NC without lateral bias. The concept of coupling the ferroelectric polarization is proposed and synergistically contributes to the performance in future applications of steep subthreshold slope devices.