Controllability of Multi-level States in Memristive Device Models using a Transistor as Current Compliance during SET Operation

摘要

Redox-based resistive switching devices are an emerging class of non-volatile ultra-scalable memory and logic devices. These devices offer complex internal device physics leading to rich dynamical behavior. Memristive device models are intended to reproduce the underlying redox-based resistive switching device behavior accurately to enable proper circuit simulations. A specific feature of resistively switching devices is the controllability of multi-level resistive states by using a current compliance during the SET operation. Here, we consider a one-transistor-one-resistive-switch circuit to study the multilevel capability of three different types of memristive models. The feasibility of current compliance induced multi-level resistance state control is a check for the accuracy of the memristive device model.