Low Voltage and Low power UWB CMOS LNA using Current-Reused and Forward Body Biasing Techniques

摘要

A ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated in 0.18μm CMOS technology. The successful integration of current-reused and forward body biasing (FBB) techniques in a cascade amplifier can enable an aggressive scaling of the supply voltages, V_(DD) and V_(G1) to 1.0V and 0.53V. The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The measured power gain (S_(21)) can reach 10.55～12.6dB and noise figure (NF_(50)) is 3.2～3.95 dB through the UWB (3～10.5GHz). This UWB LNA with small chip area (0.69mm~2) provides a solution of low voltages, low power, and low cost.