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Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and Applications

机译:钛酸锶(BST)钛酸钡(BST)氧化铝中薄膜薄膜滴度变容二抗滑球 - 设计,制造,表征和应用

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Discrete Barium Strontium Titanate (BST) thin-film capacitors in industry standard 0603 footprint are introduced and characterized. BST capacitors have a voltage-dependent permittivity, enabling BST thin-film capacitors to be used as tuning elements in frequency agile devices. The capacitance changed by 1.5:1 at 35 V (116 kV/cm) bias. The temperature dependence of the capacitance was measured to be less than ± 20% from - 100°C to + 100°C. A 2nd-order tunable combline bandpass filter on FR4 substrate has been implemented using the discrete BST varactors. The filter showed a center frequency tuning of 22% from 2.14 GHz to 2.61 GHz upon application of 130 V (433 kV/cm) bias. The zero-bias insertion loss was 4.9 dB which decreased to 2.9 dB at the high bias state. The return loss was better than 11 dB over the tuning range. Nonlinear characterization of the filter using two-tone test and a digitally-modulated CDMA 2000 signal showed an IP3 of +32 dBm and an ACPR of better than -50 dBc up to 26 dBm of input power, respectively.
机译:钛酸钡(BST)薄膜电容在工业标准0603的离散钡锶(BST)占地面积。 BST电容器具有电压依赖性介电常数,使BST薄膜电容器能够用作频率敏捷设备中的调谐元件。电容在35 V(116 kV / cm)偏压下变为1.5:1。测量电容的温度依赖性从-100℃至+ 100°C的±20%小于±20%。使用离散BST变容器实现了FR4基板上的2nd阶可调性Combline带通滤波器。在施用130V(433 kV / cm)偏压时,过滤器显示在2.14GHz至2.61GHz的中心频率调谐为22%。零偏置插入损耗为4.9dB,在高偏置状态下降至2.9 dB。在调谐范围内,回报损耗优于11 dB。使用双音测试的滤波器的非线性表征和数字调制的CDMA 2000信号显示IP3的+32dBm和acpr,分别优于-50dBc,最多26dBm的输入功率。

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