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A new volume integral equation formulation for analyzing 3-D circuits in inhomogeneous dielectrics exposed to external fields

机译:一种新的体积积分方程公式,用于分析暴露于外场的非均匀介质中的3-D电路

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A new volume integral equation formulation is developed for the full-wave extraction of 3-D circuits, containing arbitrarily shaped lossy conductors with inhomogeneous dielectrics, in the presence of external electromagnetic fields. It exploits all the flexibilities offered by the volume integral formulation traditionally developed for solving wave-related problems, while accommodating a circuit-source based excitation in order to model both the circuit excitation and the ambient environment where the circuit is exposed to. It facilitates circuit parameter extraction at ports located anywhere in the physical structure of a circuit. An excellent agreement of numerical results with reference data validates the proposed formulation.
机译:开发了一种新的体积积分方程公式,用于在存在外部电磁场的情况下对3D电路进行全波提取,其中包含任意形状的有损耗的导体,这些导体具有不均匀的电介质。它利用了传统上为解决与波相关的问题而开发的体积积分公式提供的所有灵活性,同时适应了基于电路源的激励,以便对电路激励和电路所处的周围环境进行建模。它有助于在电路物理结构中任何位置的端口提取电路参数。数值结果与参考数据的极佳一致性验证了所提出的公式。

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