30W output / 60 PAE GaN power amplifier at X-band 8 relative bandwidth

摘要

In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 μm GaN HEMT process is presented. The fabricated HPA has achieved the Pout of 28–31.5 W and the PAE (power added efficiency) of 57–60% and the gain of 11–12.5dB over 8% relative bandwidth. To the authors' knowledge, this is one of the highest level performance among ever-reported ones.