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Tunable stepped impedance resonator bandpass filter using ferroelectric materials

机译:使用铁电材料可调阶梯阻抗谐振器带通滤波器

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In this paper, a stepped impedance resonator (SIR) bandpass filter using BST thin film as a tunable device has been discussed. For the analysis of relative dielectric constant of BST thin films, the BST interdigital capacitor (IDC) is fabricated with finger’s width and gap of 10 µm and 5 µm, respectivelym and the capacitance of IDC is 0.951 pF and the relative dielectric constant of BST thin film is 1,097 at 6 GHz. The tunable SIR bandpass filter using BST thin films is designated with coupling section of 22° and tapped feeding and has been successfully demonstrated with the thickness of BST thin films of 500 nm on the MgO substrate. The center frequency of the tunable SIR bandpass filter is moved from 6.15 GHz to 6.29 GHz at 50 V bias with about 3% bandwidth.
机译:本文讨论了使用BST薄膜作为可调谐装置的阶梯式阻抗谐振器(SIR)带通滤波器。为了分析BST薄膜的相对介电常数,BST渐进式电容器(IDC)用手指的宽度和间隙为10μm和5μm,分别和IDC的电容为0.951PF和BST薄的相对介电常数。电影是6 GHz的1,097。使用BST薄膜的可调谐SIR带通滤波器用22°的耦合部分表示,并在MgO衬底上成功地证明了500nm的BST薄膜的厚度。可调谐SIR带通滤波器的中心频率从6.15GHz到6.29GHz移动到50 V偏差,带宽约为3%。

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