A V-Band Two-Element Phased-Array Receiver using Reflection-Type Vector Modulator in 90-nm CMOS Technology

摘要

This paper describes a V-band 2-element phase-array receiver in 90 nm CMOS process. The receiver consists of two low noise amplifiers (LNAs), two vector modulators, and a down-converter mixer. The vector modulators are designed using a modified reflection-type in- and quadrature-phase modulator for amplitude and phase control. At 66 GHz, the measured small-signal gain of LNA is 24 dB with a noise figure of 6.9 dB. The measured small-signal gains of the LNA with the vector modulator for the four phase states are higher than 5 dB between 64 and 67 GHz. The measured conversion gain of mixer is 6.7 dB. The measured minimum phase and amplitude errors are 4.8° and 1 dB, respectively. The chip size is 1.45×0.95 mm~2.