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A 350-mV, under-200-ppm allan deviation floor gate-leakage-based timer using an amplifier-less replica-bias switching technique in 55-nm DDC CMOS

机译:350-MV,基于500ppm的ZHS-200-PPM偏离底部栅极泄漏的定时器,使用较少55纳米DDC CMOS中的放大器的副本 - 偏置开关技术

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This paper presents a gate-leakage-based timer using an amplifier-less replica-bias switching technique that can realize stable and low-voltage operation with logic circuits based architecture. To generate stable oscillation frequency in low power operation, the topology that discharges the pre-charged capacitor via a gate leaking MOS capacitor with low-leakage switch is employed. The proposed amplifier-less replica-bias switching technique enables the low-voltage operation of the timer by tracking the discharging node of the capacitor and minimizing the leakages through the switch without analog circuits. The native NMOS header is implemented to reduce supply sensitivity of the timer. The test chip fabricated in 55-nm deeply depleted channel (DDC) CMOS technology achieves an energy efficiency of 25 pJ/cycle at a supply voltage of 350 mV with a body bias in a 0.0022 mm2 area, and 200-ppm Allan deviation floor.
机译:本文介绍了一种基于栅极泄漏的定时器,使用较少的放大器的倒置式开关技术,可以实现与基于逻辑电路的架构的稳定和低压操作。为了在低功率操作中产生稳定的振荡频率,采用通过栅极泄漏MOS电容器排出预充电电容器的拓扑电容器。所提出的放大器的副本 - 偏置开关技术通过跟踪电容器的放电节点并最小化通过开关的泄漏而没有模拟电路来实现定时器的低压操作。实现本机NMOS报头以降低计时器的供应灵敏度。在55-nm深度耗尽的通道(DDC)CMOS技术中制造的测试芯片在350 mV的电源电压下实现了25pj /循环的能量效率,其体偏压为0.0022mm 2区域,和200 ppm allan偏差楼层。

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