High-speed, high-efficiency, and large-area p-i-n photodiode for operations from 850 to 1550 nm optical wavelengths

摘要

We demonstrate novel photodiodes with large active diameters (55 µm). Under −1 V bias, they achieve high-speed (14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 µm wavelength operation respectively.