Temperature dependence of resistance of conductive filament formed in NiO layer in resistive switching memory

摘要

Investigation of I–V characteristic and temperature dependence of resistance in the resistive switching (RS) memory with NiO insulater was performed. Unipolar operation mode was obtained in this device. From temperature dependence of resistance, it is suggested that the low resistance state (LRS) is metallic conduction and the high resistance state (HRS) is variable-range hopping (VRH) conduction.