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>A 250-MHz 256b-I/O 1-Mb STT-MRAM with advanced perpendicular MTJ based dual cell for nonvolatile magnetic caches to reduce active power of processors
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A 250-MHz 256b-I/O 1-Mb STT-MRAM with advanced perpendicular MTJ based dual cell for nonvolatile magnetic caches to reduce active power of processors
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机译:250 MHz 256b-I / O 1-Mb STT-MRAM,具有基于垂直MTJ的高级双单元,用于非易失性磁缓存,以减少处理器的有功功率
This paper presents a novel 1Mb STT-MRAM for power and area reduction of cache memory in micro-processors. This memory adopts current-integral sensing scheme for high speed read, and uses advanced perpendicular STT-MRAM for high speed write to achieve 250 MHz operation, 17.8 mW read power and 46.5 mW write power per 256-b I/O. Using a processor simulator, it has been confirmed the total cache power is reduced, whereas those for STT-MRAMs previously reported are increased compared with that for SRAM.
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机译:本文提出了一种新颖的1Mb STT-MRAM,用于减少微处理器中的高速缓存存储器的功耗和面积。该存储器采用电流积分检测方案进行高速读取,并使用高级垂直STT-MRAM进行高速写入,以实现250 MHz的工作速度,每256-b I / O达到17.8 mW的读取功率和46.5 mW的写入功率。使用处理器模拟器,已经确认总缓存容量会减少,而先前报告的STT-MRAM的缓存容量则比SRAM的缓存容量有所增加。
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