A 4.7 mW W-Band LNA with 4.2 dB NF and 12 dB Gain Using Drain to Gate Feedback in 45nm CMOS RFSOI Technology

摘要

This paper presents a W-band low-noise amplifier using 45nm CMOS RFSOI. The amplifier topology consists of a two-stage common-source design followed by a one-stage cascode, with drain-to-gate feedback applied to the last stage to further increase the gain. The measured gain is > 10 dB at 80-95 GHz with a peak of 12 dB at 90 GHz. The measured noise figure (NF) is <; 4.9 dB at 85-95 GHz with minimum of 4.2 dB at 90 GHz. This is achieved with a total power consumption of 4.7 mW. To our knowledge, this represents record-performance in term of gain, NF and power consumption at W-band for all silicon technologies.