Single die broadband CMOS power amplifier and tracker with 37 overall efficiency for TDD/FDD LTE applications

摘要

This paper presents a 2.3GHz ??? 2.7GHz broadband CMOS FDD/TDD LTE Band 7. 38, 40 and 41 power amplifier (PA) fully integrated with a fast envelope tracker (ET) on a single 0.18??m CMOS die. The PA and the tracker achieve a 37% overall efficiency for 26.5dBm and ???39dBc ACLR1. The entire design including the input/output match uses an active silicon area around 2.7mm2.