ESD protection using BIMOS transistor in 100 GHz RF application for advanced CMOS technology

摘要

The aim purpose of this study is to evaluate the ESD protection using BIMOS transistor in the RF and fast swing application for advanced CMOS technology in 32 nm high k metal gate & bulk substrate. The ESD target is 1kV HBM and the RF one is 100 GHz broadband. Moreover the DC behavior is also performed. Thus, the challenge here is to be efficient in ESD protection with a minimum of parasitic capacitance. To address these specifications the solution discussed in this paper uses the Bimos transistor characterized through TLP and DC measurements. A RF model is proposed and calibrated thanks to S parameters. Moreover, the R parameter range is investigated to the full 100GHz frequency range.